NTHD4508NT1G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

NTHD4508NT1G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW18952929
Category

MOSFET, MOSFET Transistor
Package

SMD-8
Description

Chip N-CH 20V 3A
Documentation

Datasheet

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NTHD4508NT1G Specifications

Attribute	Attribute Value

Part Number	NTHD4508NT1G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW18952929
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SMD-8
Voltage Rating (DC)	20.0 V
Current Rating	3.10 A
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.06 Ω
Polarity	N-Channel, Dual N-Channel
Power Dissipation	2.1 W
Threshold Voltage	1.2 V
Drain to Source Voltage (Vds)	20 V
Breakdown Voltage (Drain to Source)	20.0 V
Breakdown Voltage (Gate to Source)	±12.0 V
Continuous Drain Current (Ids)	4.10 A, 4.10 mA
Rise Time	15 ns
Input Capacitance (Ciss)	180pF @10V(Vds)
Input Power (Max)	1.13 W
Fall Time	3 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2.1 W
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Size-Length	3.1 mm
Size-Width	1.7 mm
Size-Height	1.1 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The NTHD4508NT1G is a ChipFET™ dual N-channel Power MOSFET designed for battery and low side switching in portable equipment such as MP3 players, cell phones, DSCs and PDAs. It is suitable for DC-to-DC buck/boost converter and level shifting applications.
Low RDS (ON) and fast switching
Excellent thermal capabilities where heat transfer is required

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