NTHD4P02FT1G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

NTHD4P02FT1G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW45997792
Category

MOSFET, MOSFET Transistor
Package

SMD-8
Description

Chip P-CH 20V 2.2A
Documentation

Datasheet

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NTHD4P02FT1G Specifications

Attribute	Attribute Value

Part Number	NTHD4P02FT1G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW45997792
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SMD-8
Voltage Rating (DC)	-20.0 V
Current Rating	-3.00 A
Drain to Source Resistance (on) (Rds)	200 mΩ
Polarity	P-Channel
Power Dissipation	1.1 W
Input Capacitance	300 pF
Gate Charge	6.00 nC
Drain to Source Voltage (Vds)	20 V
Breakdown Voltage (Gate to Source)	±12.0 V
Continuous Drain Current (Ids)	3.00 A, -2.20 A
Rise Time	13 ns
Input Capacitance (Ciss)	300pF @10V(Vds)
Input Power (Max)	1.1 W
Fall Time	27 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	1.1 W
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

Amplify electronic signals and switch between them with the help of ON Semiconductor"s NTHD4P02FT1G power MOSFET. Its maximum power dissipation is 1100 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.

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