NTHS5404T1G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

NTHS5404T1G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW8409219
Category

MOSFET, MOSFET Transistor
Package

SMD-8
Description

Chip N-CH 20V 5.2A
Documentation

Datasheet

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NTHS5404T1G Specifications

Attribute	Attribute Value

Part Number	NTHS5404T1G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW8409219
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SMD-8
Voltage Rating (DC)	20.0 V
Current Rating	5.20 A
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	25 mΩ
Polarity	N-Channel
Power Dissipation	1.3 W
Threshold Voltage	600 mV
Drain to Source Voltage (Vds)	20 V
Breakdown Voltage (Drain to Source)	20.0 V
Breakdown Voltage (Gate to Source)	±12.0 V
Continuous Drain Current (Ids)	7.20 A
Rise Time	7 ns
Input Capacitance (Ciss)	740pF @16V(Vds)
Input Power (Max)	1.3 W
Fall Time	28 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	1.3W (Ta)
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Size-Length	3.1 mm
Size-Width	1.7 mm
Size-Height	1.1 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

Compared to traditional transistors, NTHS5404T1G power MOSFETs, developed by ON Semiconductor, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 1300 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.

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