NTJD4001NT1G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

NTJD4001NT1G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW316052
Category

MOSFET, MOSFET Transistor
Package

SC-70-6
Description

MOSFET; Dual N-Ch; VDSS 30V; RDS(ON) 1Ω; ID 250mA; SOT-363; PD 272mW; VGS +/-20V; -55d
Documentation

Datasheet

NTJD4001NT1G Global Supplier

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NTJD4001NT1G Specifications

Attribute	Attribute Value

Part Number	NTJD4001NT1G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW316052
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	6 Pin
Case/Package	SC-70-6
Voltage Rating (DC)	30.0 V
Current Rating	250 mA
Number of Positions	6 Position
Drain to Source Resistance (on) (Rds)	1 Ω
Polarity	Dual N-Channel
Power Dissipation	272 mW
Threshold Voltage	1.2 V
Input Capacitance	20pF @5V
Drain to Source Voltage (Vds)	30 V
Breakdown Voltage (Drain to Source)	30 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	250 mA
Rise Time	23 ns
Input Capacitance (Ciss)	33pF @5V(Vds)
Input Power (Max)	272 mW
Fall Time	82 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2.72 W
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Size-Length	2.2 mm
Size-Width	1.35 mm
Size-Height	1 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The NTJD4001NT1G is a dual N-channel small signal MOSFET designed for Li-Ion battery supplied devices like cell phones, PDAs and DSC. It is suitable for low side load switch, buck converters and level shift applications.
Low gate charge for fast switching
ESD protected gate

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