NTLJD3119CTBG - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

NTLJD3119CTBG
Manufacturer

ON Semiconductor
ChipWorker Part#

CW4079350
Category

MOSFET, MOSFET Transistor
Package

WDFN-6
Description

Power MOSFET 20V 4.6A 65mOhm Complementary WDFN6, WDFN6 2x2, 0.65P, 3000-REEL
Documentation

Datasheet

NTLJD3119CTBG Global Supplier

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NTLJD3119CTBG Specifications

Attribute	Attribute Value

Part Number	NTLJD3119CTBG
Manufacturer	ON Semiconductor
ChipWorker Part#	CW4079350
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	6 Pin
Case/Package	WDFN-6
Number of Positions	6 Position
Drain to Source Resistance (on) (Rds)	0.037 Ω
Polarity	N-Channel, P-Channel
Power Dissipation	2.3 W
Threshold Voltage	700 mV
Drain to Source Voltage (Vds)	20 V
Breakdown Voltage (Gate to Source)	±8.00 V
Continuous Drain Current (Ids)	3.80 A, 4.60 A
Input Capacitance (Ciss)	271pF @10V(Vds)
Input Power (Max)	710 mW
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2.3 W
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Size-Length	2 mm
Size-Width	2 mm
Size-Height	0.75 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The NTLJD3119CTBG is a N/P-channel complementary MOSFET designed for load management devices like PDAs, Cellular Phones and Hard Drives. It is suitable for synchronous DC-to-DC conversion circuits and colour display, camera flash regulator applications.
Package with exposed drain pad for excellent thermal conduction
Footprint same as SC-88 package
Leading Edge Trench technology for low ON-resistance
1.8V Gate threshold voltage
Low profile (<0.8mm) for easy fit in thin environments

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