NTMFS4833NT1G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

NTMFS4833NT1G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW13459811
Category

MOSFET, MOSFET Transistor
Package

SO-FL-8
Description

SO-FL N-CH 30V 28A
Documentation

Datasheet

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NTMFS4833NT1G Specifications

Attribute	Attribute Value

Part Number	NTMFS4833NT1G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW13459811
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	5 Pin
Case/Package	SO-FL-8
Number of Channels	1 Channel
Number of Positions	5 Position
Drain to Source Resistance (on) (Rds)	0.0013 Ω
Polarity	N-Channel
Power Dissipation	125 W
Threshold Voltage	1.5 V
Input Capacitance	5600pF @12V
Drain to Source Voltage (Vds)	30 V
Breakdown Voltage (Drain to Source)	30 V
Continuous Drain Current (Ids)	191 A
Rise Time	34 ns
Input Capacitance (Ciss)	5600pF @12V(Vds)
Input Power (Max)	910 mW
Fall Time	17 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	910mW (Ta), 125W (Tc)
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Size-Length	4.9 mm
Size-Width	5.8 mm
Size-Height	1 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Unknown
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The NTMFS4833NT1G is a N-channel Power MOSFET offers 30V drain source voltage and 26A continuous drain current. It is suitable for CPU power delivery, DC-to-DC converters and low side switching applications.
Low RDS (ON) to minimize conduction losses
Low capacitance to minimize driver losses
Optimized gate charge to minimize switching losses
-55 to 150°C Operating junction temperature range

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