NUS5530MNR2G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

NUS5530MNR2G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW59913511
Category

BJT Transistor, BJT
Package

DFN-8
Description

NUS5530MN: Integrated Power MOSFET 20V 3.9A 60mOhm Dual P-Channel with PNP Low VCE Switching Transistor DFN8
Documentation

Datasheet

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NUS5530MNR2G Specifications

Attribute	Attribute Value

Part Number	NUS5530MNR2G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW59913511
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	DFN-8
Halogen Free Status	Halogen Free
Drain to Source Resistance (on) (Rds)	200 Ω
Polarity	P-Channel
Power Dissipation	635 mW
Breakdown Voltage (Drain to Source)	20 V
Continuous Drain Current (Ids)	-2.00 A
hFE Min	100
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2.5 W
Voltage Rating	35 V
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Size-Length	3.3 mm
Size-Width	3.3 mm
Size-Height	0.95 mm
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

**Bipolar PNP & MOSFET Transistor, ON Semiconductor**
A combined Low Saturation PNP Bipolar Transistor and P-channel MOSFET in a compact iintegrated SMT package

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