NVD2955T4G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

NVD2955T4G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW58704196
Category

MOSFET, MOSFET Transistor
Package

TO-252-3
Description

DPAK P-CH 60V 12A
Documentation

Datasheet

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NVD2955T4G Specifications

Attribute	Attribute Value

Part Number	NVD2955T4G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW58704196
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.155 Ω
Polarity	P-Channel
Power Dissipation	55 W
Drain to Source Voltage (Vds)	60 V
Continuous Drain Current (Ids)	12A
Rise Time	45 ns
Input Capacitance (Ciss)	500pF @25V(Vds)
Fall Time	48 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	55000 mW
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Operating Temperature	-55℃ ~ 175℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low−voltage, high−speed switching applications in power supplies, converters, and power motor controls. These devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer an additional safety margin against unexpected voltage transients.
Features
• Avalanche Energy Specified
• IDSS and VDS(on) Specified at Elevated Temperature
• Designed for Low−Voltage, High−Speed Switching Applications and to Withstand High Energy in the Avalanche and Commutation Modes
• NVD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant

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