NVD5117PLT4G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

NVD5117PLT4G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW23569266
Category

MOSFET, MOSFET Transistor
Package

TO-252-3
Description

DPAK P-CH 60V 11A
Documentation

Datasheet

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NVD5117PLT4G Specifications

Attribute	Attribute Value

Part Number	NVD5117PLT4G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW23569266
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.016 Ω
Polarity	P-Channel
Power Dissipation	118 W
Threshold Voltage	1.5 V
Drain to Source Voltage (Vds)	60 V
Continuous Drain Current (Ids)	11A
Rise Time	195 ns
Input Capacitance (Ciss)	4800pF @25V(Vds)
Input Power (Max)	4.1 W
Fall Time	132 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	4.1W (Ta), 118W (Tc)
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Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

The NVD5117PLT4G is a -60V Single P-channel Power MOSFET features low RDS (on) to minimize conduction losses and high current capability.
Avalanche energy specified
AEC-Q101 qualified

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