NVMFD5C462NLT1G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

NVMFD5C462NLT1G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW40123552
Package

DFN-8
Description

Power MOSFET 40V, 84A, 4.7mOhm, Dual N-Channel, SO8-FL, Logic Level.
Documentation

Datasheet

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NVMFD5C462NLT1G Specifications

Attribute	Attribute Value

Part Number	NVMFD5C462NLT1G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW40123552
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	DFN-8
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.0039 Ω
Power Dissipation	3 W
Threshold Voltage	2.2 V
Drain to Source Voltage (Vds)	40 V
Rise Time	16 ns
Input Capacitance (Ciss)	1300pF @25V(Vds)
Fall Time	6 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	3000 mW
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Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	Compliant with Exemption
Lead-Free Status	Lead Free

Product Description

Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
Features | | Benefits
---|---|---
| | | | |
Low on resistance
| |
Minimal conduction losses
High current capability
| |
Robust load performance
100% avalanche tested
| |
Safeguard against voltage overstress failures
AEC-Q101 Qualified
| |
Suitable for automotive applications

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