OPA2132P - TI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

OPA2132P
Manufacturer

TI
ChipWorker Part#

CW10058296
Category

Operational Amplifier, OP Amp IC
Package

PDIP-8
Description

Operational Amplifier, 2 Amplifier, 8MHz, 20V/µs, ± 2.5V to ± 18V, DIP, 8Pins
Documentation

Datasheet

OPA2132P Global Supplier

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OPA2132P Specifications

Attribute	Attribute Value

Part Number	OPA2132P
Manufacturer	TI
ChipWorker Part#	CW10058296
Category	Operational Amplifier, OP Amp IC
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	8 Pin
Case/Package	PDIP-8
Supply Current	4 mA
Number of Circuits	2 Circuit
Number of Channels	2 Channel
Number of Positions	8 Position
Common Mode Rejection Ratio	96 dB
Input Offset Drift	2.00 µV/K
Bandwidth	8 MHz
Slew Rate	20.0 V/μs
Gain Bandwidth Product	8 MHz
Input Offset Voltage	250 µV
Input Bias Current	5 pA
Operating Temperature (Max)	85 ℃
Operating Temperature (Min)	-40 ℃
Gain Bandwidth	8 MHz
Minimum CMRR Range	96 dB
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Size-Length	9.81 mm
Size-Width	6.35 mm
Size-Height	4.57 mm
Operating Temperature	-40℃ ~ 85℃
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2014/12/17

Product Description

The OPA2132P is a FET-input Operational Amplifier provides highs-peed and excellent DC performance. The combination of high slew rate and wide bandwidth provide fast settling time. High performance grades are available in the single and dual versions. All are ideal for general-purpose, audio, data acquisition and communications applications, especially where high source impedance is encountered. The OPA2132 is easy to use and free from phase inversion and overload problems often found in common FET-input operational amplifier. Input cascode circuitry provides excellent common-mode rejection and maintains low input bias current over its wide input voltage range. The operational amplifier is stable in unity gain and provides excellent dynamic behavior over a wide range of load conditions, including high load capacitance. Dual and quad versions feature completely independent circuitry for lowest crosstalk and freedom from interaction, even when overdriven or overloaded.
0.00008% Low distortion
500µV Maximum low offset voltage
Green product and no Sb/Br
This device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

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