PBHV8115T - NXP

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

PBHV8115T
Manufacturer

NXP
ChipWorker Part#

CW128262888
Category

BJT Transistor, BJT
Package

SOT-23
Description

TO-236AB NPN 150V 1A
Documentation

Datasheet

PBHV8115T Global Supplier

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PBHV8115T Specifications

Attribute	Attribute Value

Part Number	PBHV8115T
Manufacturer	NXP
ChipWorker Part#	CW128262888
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-23
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	300 mW
Breakdown Voltage (Collector to Emitter)	150 V
Continuous Collector Current	1A
hFE Min	10
DC Current Gain (hFE)	250
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	300 mW
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Size-Length	3 mm
Size-Width	1.4 mm
Size-Height	1.1 mm
Product Lifecycle Status	Unknown
Packaging	Cut Tape (CT)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

The PBHV8115T is a 1A NPN breakthrough-in small signal (BISS) Transistor in a small surface-mount plastic package.
High voltage
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
AEC-Q101 qualified
W6 Marking code

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