PBHV8115Z - NXP

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

PBHV8115Z
Manufacturer

NXP
ChipWorker Part#

CW142887313
Category

BJT Transistor, BJT
Package

SOT-223
Description

SC-73 NPN 150V 1A
Documentation

Datasheet

PBHV8115Z Global Supplier

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PBHV8115Z Specifications

Attribute	Attribute Value

Part Number	PBHV8115Z
Manufacturer	NXP
ChipWorker Part#	CW142887313
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	4 Pin
Case/Package	SOT-223
Number of Positions	4 Position
Polarity	NPN
Power Dissipation	700 mW
Breakdown Voltage (Collector to Emitter)	150 V
Continuous Collector Current	1A
DC Current Gain (hFE)	250
Operating Temperature (Max)	150 ℃
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Product Lifecycle Status	Unknown
Packaging	Cut Tape (CT)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

The PBHV8115Z is a 1A NPN breakthrough-in small signal (BISS) Transistor in a medium power surface-mount plastic package with increased heat-sink.
High voltage
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
AEC-Q101 qualified
PNP complement is PBHV9115Z
V8115Z Marking code

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- Carefully tested and packaged by ChipWorker
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