PBSS4041SPN - NXP

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

PBSS4041SPN
Manufacturer

NXP
ChipWorker Part#

CW161017600
Category

BJT Transistor, BJT
Package

SOIC
Description

SO NPN+PNP 60V 6.7A/5.9A
Documentation

Datasheet

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PBSS4041SPN Specifications

Attribute	Attribute Value

Part Number	PBSS4041SPN
Manufacturer	NXP
ChipWorker Part#	CW161017600
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC
Number of Positions	8 Position
Polarity	NPN, PNP
Power Dissipation	2.3 W
Breakdown Voltage (Collector to Emitter)	60 V
Continuous Collector Current	6.7A/5.9A
DC Current Gain (hFE)	300
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2.3 W
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Size-Length	5 mm
Size-Width	4 mm
Size-Height	1.75 mm
Product Lifecycle Status	Unknown
Packaging	Cut Tape (CT)
RoHS	RoHS Compliant
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

The PBSS4041SPN is a 60V NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) Transistor with very low collector-emitter saturation voltage and high efficiency due to less heat generation. Suitable for load switch, battery driven devices and charging circuits.
150°C Junction temperature
Smaller required printed-circuit board (PCB) area than for conventional transistors
High collector current capability
High collector current gain

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