PBSS4140T - NXP

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

PBSS4140T
Manufacturer

NXP
ChipWorker Part#

CW66181257
Category

BJT Transistor, BJT
Package

TO-236
Description

TO-236AB NPN 40V 1A
Documentation

Datasheet

PBSS4140T Global Supplier

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PBSS4140T Specifications

Attribute	Attribute Value

Part Number	PBSS4140T
Manufacturer	NXP
ChipWorker Part#	CW66181257
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-236
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	300 mW
Breakdown Voltage (Collector to Emitter)	40 V
Continuous Collector Current	1A
hFE Min	200
DC Current Gain (hFE)	300
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	0.45 W
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Size-Length	3 mm
Size-Width	1.4 mm
Size-Height	1 mm
Product Lifecycle Status	Unknown
Packaging	Cut Tape (CT)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

The PBSS4140T is a 1A NPN breakthrough-in small signal (BISS) Transistor in a plastic package. It is suitable for use with the general purpose switching and muting, battery driven equipment"s.
Low collector-emitter saturation voltage VCEsat
High current capabilities
Improved device reliability due to reduced heat generation
PNP complement is PBSS5140T
ZT Marking code

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