PBSS4160T - NXP

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

PBSS4160T
Manufacturer

NXP
ChipWorker Part#

CW121978621
Category

BJT Transistor, BJT
Package

SOT-23
Description

Trans GP BJT NPN 60V 0.9A Automotive 3Pin TO-236AB
Documentation

Datasheet

PBSS4160T Global Supplier

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PBSS4160T Specifications

Attribute	Attribute Value

Part Number	PBSS4160T
Manufacturer	NXP
ChipWorker Part#	CW121978621
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-23
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	270 mW
hFE Min	100
DC Current Gain (hFE)	400
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	1.25 W
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Size-Length	3 mm
Size-Width	1.4 mm
Size-Height	1 mm
Product Lifecycle Status	Unknown
Packaging	Cut Tape (CT)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

The PBSS4160T is a 1A NPN breakthrough-in small signal (BISS) Transistor in a plastic package. It is suitable for use with the driver in low supply voltage applications and inductive load drivers.
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High efficiency, reduces heat generation
Reduces printed-circuit board area required
PNP complement is PBSS5160T
U5 Marking code

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