PBSS5350T - NXP

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

PBSS5350T
Manufacturer

NXP
ChipWorker Part#

CW61441883
Category

BJT Transistor, BJT
Package

SOT-23
Description

TO-236AB PNP 50V 2A
Documentation

Datasheet

PBSS5350T Global Supplier

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PBSS5350T Specifications

Attribute	Attribute Value

Part Number	PBSS5350T
Manufacturer	NXP
ChipWorker Part#	CW61441883
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-23
Number of Positions	3 Position
Polarity	PNP
Power Dissipation	300 mW
Breakdown Voltage (Collector to Emitter)	50 V
Continuous Collector Current	2A
hFE Min	80
DC Current Gain (hFE)	200
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	1.2 W
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Size-Length	3 mm
Size-Width	1.4 mm
Size-Height	1 mm
Operating Temperature	-65℃ ~ 150℃
Product Lifecycle Status	Unknown
Packaging	Cut Tape (CT)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
HK STC License	NLR

Product Description

The PBSS5350T is a 3A PNP breakthrough-in small signal (BISS) Transistor housed in a surface-mount plastic package.
Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat
High collector current capability
High collector current gain
Improved efficiency due to reduced heat generation
NPN complement is PBSS4350T
ZD Marking code

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