PBSS9110Z - NXP

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

PBSS9110Z
Manufacturer

NXP
ChipWorker Part#

CW128206500
Category

BJT Transistor, BJT
Package

SOT-223
Description

SC-73 PNP 100V 1A
Documentation

Datasheet

PBSS9110Z Global Supplier

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PBSS9110Z Specifications

Attribute	Attribute Value

Part Number	PBSS9110Z
Manufacturer	NXP
ChipWorker Part#	CW128206500
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	4 Pin
Case/Package	SOT-223
Number of Positions	4 Position
Polarity	PNP
Power Dissipation	650 mW
Breakdown Voltage (Collector to Emitter)	100 V
Continuous Collector Current	1A
hFE Min	125
DC Current Gain (hFE)	150
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	1.4 W
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Size-Length	6.7 mm
Size-Width	3.7 mm
Size-Height	1.7 mm
Operating Temperature	-65℃ ~ 150℃
Product Lifecycle Status	Unknown
Packaging	Cut Tape (CT)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

The PBSS9110Z is a 1A PNP breakthrough-in small signal (BISS) Transistor in a surface-mount plastic package with increased heat-sink.
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
High efficiency due to less heat generation
Smaller required printed-circuit board (PCB) area than for conventional transistors
NPN complement is PBSS8110Z
PB9110 Marking code

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