PC48F4400P0TB0EE - Micron

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

PC48F4400P0TB0EE
Manufacturer

Micron
ChipWorker Part#

CW84172219
Category

Flash Memory, Flash
Package

BGA-64
Description

NOR Flash Parallel/Serial 2.5V/3V/3.3V 512Mbit 32M x 16Bit 64Pin EZBGA Tray
Documentation

Datasheet

PC48F4400P0TB0EE Global Supplier

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PC48F4400P0TB0EE Specifications

Attribute	Attribute Value

Part Number	PC48F4400P0TB0EE
Manufacturer	Micron
ChipWorker Part#	CW84172219
Category	Flash Memory, Flash
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	64 Pin
Case/Package	BGA-64
Supply Voltage (DC)	2.30V (min)
Supply Current	31 mA
Number of Positions	64 Position
Clock Speed	52 MHz
Number of Bits	16 Bit
Access Time	95 ns
Memory Size	64000000 B
Operating Temperature (Max)	85 ℃
Operating Temperature (Min)	-40 ℃
Supply Voltage	2.3V ~ 3.6V
Supply Voltage (Max)	3.6 V
Supply Voltage (Min)	2.3 V
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Size-Length	10.1 mm
Size-Width	8.1 mm
Size-Height	1.2 mm
Operating Temperature	-40℃ ~ 85℃
Product Lifecycle Status	Active
Packaging	Tray
RoHS	RoHS Compliant
Lead-Free Status
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2014/06/16

Product Description

The PC48F4400P0TB0EE is a 512MB high performance at low voltage Flash Memory with virtual chip enable I/O voltage CE# configuration. The Numonyx® Individually erasable memory blocks are sized for optimum code and data storage. Upon initial power-up or return from reset, the device defaults to asynchronous page-mode read. Configuring the RCR enables synchronous burst-mode reads. In synchronous burst mode, output data is synchronized with user-supplied clock signal. A WAIT signal provides an easy CPU-to-flash memory synchronization. In addition to the enhanced architecture and interface, the device incorporates technology that enables fast factory program and erase operations. Designed for low voltage systems, the P33 family flash memory supports read operations with VCC at 3V and erase and program operations with VPP at 3/9V. Buffered enhanced factory programming provides the fastest flash array programming performance with VPP at 9V, which increases factory throughput.
High performance
Asymmetrically-blocked architecture
Four 32kB parameter blocks - Top or bottom configuration
Blank check to verify an erase block
Absolute write protection - VPP = VSS
Power-transition erase/program lockout
Individual zero-latency block locking
Individual block lock-down capability
Password access
Basic command set and extended function interface command set compatible
Common flash interface capable
Quality and reliability - JESD47E compliant
Minimum 100000 erase cycles per block

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These terms and conditions are for reference only. The actual terms and conditions are subject to the sales staff's quotation.
- Please check the technical specifications of the products when ordering.
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- Carefully tested and packaged by ChipWorker
- Vacuum packed
- Anti-static packaging
- Anti-vibration foam
- Income quality control (IQC), 800+ qualified distributors.
- Authorities test the chip to ensure the quality, authenticity and safety of your device.
- Decapsulation control
- X-ray inspection
- XRF inspection
- Electrical testing
- Surface testing

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