PDTB123YT - NXP

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

PDTB123YT
Manufacturer

NXP
ChipWorker Part#

CW57954237
Category

BJT Transistor, BJT
Package

SOT-23
Description

TO-236AB PNP 50V 500mA
Documentation

Datasheet

PDTB123YT Global Supplier

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PDTB123YT Specifications

Attribute	Attribute Value

Part Number	PDTB123YT
Manufacturer	NXP
ChipWorker Part#	CW57954237
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-23
Number of Positions	3 Position
Polarity	PNP
Power Dissipation	250 mW
Breakdown Voltage (Collector to Emitter)	50 V
Continuous Collector Current	500mA
hFE Min	70
DC Current Gain (hFE)	70
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	250 mW
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Size-Length	3 mm
Size-Width	1.4 mm
Size-Height	1.1 mm
Product Lifecycle Status	Unknown
Packaging	Cut Tape (CT)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

The PDTB123YT is a 2.2 to 10kR PNP Resistor Equipped Transistor (RET) in a small surface-mount plastic package.
Reduces pick and place costs
Built-in bias resistors
Simplifies circuit design
Reduces component count
AEC-Q101 qualified
±10% Resistor ratio tolerance
NPN complement is PDTD123YT
7Y Marking code

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Ordering Information

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- Carefully tested and packaged by ChipWorker
- Vacuum packed
- Anti-static packaging
- Anti-vibration foam
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- Decapsulation control
- X-ray inspection
- XRF inspection
- Electrical testing
- Surface testing

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