PMBTA45 - NXP

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

PMBTA45
Manufacturer

NXP
ChipWorker Part#

CW183349100
Category

BJT Transistor, BJT
Package

SOT-23
Description

TO-236AB NPN 500V 0.15A
Documentation

Datasheet

PMBTA45 Global Supplier

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PMBTA45 Specifications

Attribute	Attribute Value

Part Number	PMBTA45
Manufacturer	NXP
ChipWorker Part#	CW183349100
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-23
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	300 mW
Breakdown Voltage (Collector to Emitter)	500 V
Continuous Collector Current	0.15A
hFE Min	50
DC Current Gain (hFE)	100
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	300 mW
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Size-Length	3 mm
Size-Width	1.4 mm
Size-Height	1.1 mm
Product Lifecycle Status	Unknown
Packaging	Cut Tape (CT)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

The PMBTA45 is a 500V NPN low VCEsat Breakthrough In Small Signal (BISS) Transistor with very low collector-emitter saturation voltage and high efficiency due to less heat generation. Suitable for use in electronic ballasts, LED driver for LED chain module, LCD backlighting, flyback converters and SMPS applications.
Complement to the PBHV9050T
AEC-Q101 qualified
150°C Junction temperature
High collector current capability
High collector current gain
High voltage

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