PMV20XNE - NXP

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

PMV20XNE
Manufacturer

NXP
ChipWorker Part#

CW432482896
Category

MOSFET, MOSFET Transistor
Package

TO-236
Description

TO-236AB N-CH 30V 5.7A
Documentation

Datasheet

PMV20XNE Global Supplier

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PMV20XNE Specifications

Attribute	Attribute Value

Part Number	PMV20XNE
Manufacturer	NXP
ChipWorker Part#	CW432482896
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-236
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.019 Ω
Polarity	N-Channel
Power Dissipation	510 mW
Threshold Voltage	650 mV
Drain to Source Voltage (Vds)	30 V
Continuous Drain Current (Ids)	5.7A
Operating Temperature (Max)	150 ℃
	expand all
Product Lifecycle Status	Unknown
RoHS	RoHS Compliant
REACH SVHC Compliance Edition	2015/12/17

Product Description

The PMV20XNE is a N-channel enhancement-mode FET in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in relay driver, high-speed line driver, low-side load-switch and switching circuit applications.
Low threshold voltage
Enhanced power dissipation capability of 1200mW
2kV HBM ESD protection
-55 to 150°C Junction temperature range

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