PMV30UN2 - NXP

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

PMV30UN2
Manufacturer

NXP
ChipWorker Part#

CW625994909
RoHS

Lead free / RoHS Compliant
Description

TO-236AB N-CH 20V 5.4A
Documentation

Datasheet

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PMV30UN2 Specifications

Attribute	Attribute Value

Part Number	PMV30UN2
Manufacturer	NXP
ChipWorker Part#	CW625994909
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-23
Drain to Source Resistance (on) (Rds)	0.024 Ω
Polarity	N-Channel
Power Dissipation	490 mW
Threshold Voltage	650 mV
Drain to Source Voltage (Vds)	20 V
Continuous Drain Current (Ids)	5.4A
Operating Temperature (Max)	150 ℃
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Product Lifecycle Status	Unknown
RoHS	RoHS Compliant
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

The PMV30UN2 is a N-channel enhancement mode Field-effect Transistor (FET) in a small surface-mounted device (SMD) plastic package using Trench MOSFET technology. Enhanced power dissipation capability of 1000mW.
Low threshold voltage
Very fast switching
0.9A Source current

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