PMXB120EPEZ - Nexperia

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

PMXB120EPEZ
Manufacturer

Nexperia
ChipWorker Part#

CW43960927
Category

MOSFET, MOSFET Transistor
Package

DFN1010D-3
Description

MOSFET P-CH 30V 2.4A DFN1010D-3
Documentation

Datasheet

PMXB120EPEZ Global Supplier

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PMXB120EPEZ Specifications

Attribute	Attribute Value

Part Number	PMXB120EPEZ
Manufacturer	Nexperia
ChipWorker Part#	CW43960927
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	DFN1010D-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.1 Ω
Power Dissipation	400 mW
Input Capacitance	309 pF
Drain to Source Voltage (Vds)	30 V
Rise Time	11 ns
Input Capacitance (Ciss)	309pF @15V(Vds)
Fall Time	7 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	400mW (Ta), 8.3W (Tc)
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status

Product Description

The PMXB120EPE is a P-channel enhancement-mode FET in a leadless ultra-small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in high-side load switch and charging switch for portable devices, power management in battery driven portables, LED driver and DC-to-DC converter applications.
Leadless ultra small and ultra thin SMD plastic package
Exposed drain pad for excellent thermal conduction
1kV ESD protection HBM
100mR Drain-source ON-state resistance RDS (ON)
-55 to 150°C Junction temperature range

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- Surface testing

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