PMZB290UNE2YL - Nexperia

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

PMZB290UNE2YL
Manufacturer

Nexperia
ChipWorker Part#

CW35686804
Category

MOSFET, MOSFET Transistor
Package

DFN1006B-3
Description

MOSFET N-CH 20V 1.2A XQFN3
Documentation

Datasheet

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PMZB290UNE2YL Specifications

Attribute	Attribute Value

Part Number	PMZB290UNE2YL
Manufacturer	Nexperia
ChipWorker Part#	CW35686804
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	DFN1006B-3
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	270 mΩ
Power Dissipation	715 mW
Threshold Voltage	450 mV
Input Capacitance	46 pF
Drain to Source Voltage (Vds)	20 V
Breakdown Voltage (Drain to Source)	20 V
Rise Time	10 ns
Input Capacitance (Ciss)	46pF @10V(Vds)
Input Power (Max)	350 mW
Fall Time	4 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	55 ℃
Power Dissipation (Max)	350mW (Ta), 5.43W (Tc)
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Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status

Product Description

The PMZB290UNE2 is a N-channel enhancement-mode FET in a leadless ultra-small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in relay driver, high-speed line driver, low-side load-switch and switching circuit applications.
Low threshold voltage
Very fast switching
>2kV HBM ESD protection
Ultra-thin package profile of 0.37mm
-55 to 150°C Junction temperature range

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