R6007ENX - ROHM Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

R6007ENX
Manufacturer

ROHM Semiconductor
ChipWorker Part#

CW100833858
Category

High Voltage MOS Transistor
Package

TO-220-3
Description

TO-220FM N 600V 7A 0.57Ω
Documentation

Datasheet

R6007ENX Global Supplier

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R6007ENX Specifications

Attribute	Attribute Value

Part Number	R6007ENX
Manufacturer	ROHM Semiconductor
ChipWorker Part#	CW100833858
Category	High Voltage MOS Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.57 Ω
Polarity	N-Channel
Power Dissipation	46 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	600 V
Continuous Drain Current (Ids)	7A
Rise Time	25 ns
Input Capacitance (Ciss)	390pF @25V(Vds)
Fall Time	35 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	40W (Tc)
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Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Bulk
Minimum Packing Quantity	1000
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

N-Channel 600V 7A (Tc) 40W (Tc) Through Hole TO-220FM

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