R8002ANX - ROHM Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

R8002ANX
Manufacturer

ROHM Semiconductor
ChipWorker Part#

CW45538713
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

TO-220FM N 800V 2A 3.3Ω
Documentation

Datasheet

R8002ANX Global Supplier

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R8002ANX Specifications

Attribute	Attribute Value

Part Number	R8002ANX
Manufacturer	ROHM Semiconductor
ChipWorker Part#	CW45538713
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Case/Package	TO-220-3
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	3.3 Ω
Polarity	N-Channel
Power Dissipation	36 W
Threshold Voltage	5 V
Drain to Source Voltage (Vds)	800 V
Continuous Drain Current (Ids)	2A
Rise Time	20 ns
Input Capacitance (Ciss)	210pF @25V(Vds)
Fall Time	70 ns
Operating Temperature (Max)	150 ℃
Power Dissipation (Max)	35W (Tc)
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Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Bulk
Minimum Packing Quantity	1000
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

Structure
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) Low input capacitance.
3) High ESD.
Application
Switching

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