RFD16N05LSM9A - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

RFD16N05LSM9A
Manufacturer

Fairchild
ChipWorker Part#

CW11274596
Category

MOSFET, MOSFET Transistor
Package

TO-252-3
Description

Trans MOSFET N-CH Si 50V 16A 3Pin(2+Tab) DPAK T/R
Documentation

Datasheet

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RFD16N05LSM9A Specifications

Attribute	Attribute Value

Part Number	RFD16N05LSM9A
Manufacturer	Fairchild
ChipWorker Part#	CW11274596
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Voltage Rating (DC)	50.0 V
Current Rating	16.0 A
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	47 mΩ
Polarity	N-Channel
Power Dissipation	60 W
Threshold Voltage	2 V
Gate Charge	80.0 nC
Drain to Source Voltage (Vds)	50 V
Breakdown Voltage (Drain to Source)	50 V
Breakdown Voltage (Gate to Source)	±10.0 V
Continuous Drain Current (Ids)	16.0 mA
Rise Time	30 ns
Input Power (Max)	60 W
Fall Time	14 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	60 W
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Size-Length	6.73 mm
Size-Width	6.22 mm
Size-Height	2.39 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

The RFD16N05LSM9A is a N-channel logic level Power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits give optimum utilization of silicon, resulting in outstanding performance. It is designed for use with logic level (5V) driving sources in applications such as programmable controllers, switching regulators, switching converters and emitter switches for bipolar transistors. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate biases in the 3 to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages. Formerly developmental type TA09871.
UIS SOA rating curve (single pulse)
Can be driven directly from CMOS, NMOS and TTL circuits
SOA is power dissipation limited
Nanosecond switching speeds
Linear transfer characteristics
High input impedance
Majority carrier device

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