RFP12N10L - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

RFP12N10L
Manufacturer

Fairchild
ChipWorker Part#

CW13384596
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

Trans MOSFET N-CH 100V 12A 3Pin(3+Tab) TO-220AB Rail
Documentation

Datasheet

RFP12N10L Global Supplier

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RFP12N10L Specifications

Attribute	Attribute Value

Part Number	RFP12N10L
Manufacturer	Fairchild
ChipWorker Part#	CW13384596
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	100 V
Current Rating	12.0 A
Power Rating	60 W
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	200 mΩ
Polarity	N-Channel
Power Dissipation	60 W
Threshold Voltage	2 V
Drain to Source Voltage (Vds)	100 V
Breakdown Voltage (Drain to Source)	100 V
Breakdown Voltage (Gate to Source)	±10.0 V
Continuous Drain Current (Ids)	12.0 A
Rise Time	70 ns
Input Capacitance (Ciss)	900pF @25V(Vds)
Input Power (Max)	60 W
Fall Time	80 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	60000 mW
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Size-Length	10.67 mm
Size-Width	4.83 mm
Size-Height	9.4 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Unknown
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

The RFP12N10L is a 100V N-channel logic level enhancement mode power MOSFET designed for logic level 5V driving sources in applications such as programmable controllers, automotive switching and solenoid drivers. This performance is accomplished through a special gate oxide design which provides full rated conduction at gate biases in the 3 to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages. This product is general usage and suitable for many different applications.
Compatible with automotive drive requirements
Can be driven directly from QMOS, NMOS and TTL circuits
High input impedance
Nanosecond switching speed
Linear transfer characteristics

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