S25FL256SAGNFI000 - Cypress Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

S25FL256SAGNFI000
Manufacturer

Cypress Semiconductor
ChipWorker Part#

CW3632963
Category

Flash Memory, Flash
Package

WSON-8
Description

NOR Flash Serial (SPI, Dual SPI, Quad SPI) 3V/3.3V 256M-bit 256M/128M/64M x 1/2Bit/4Bit 8ns 8Pin WSON EP Tray
Documentation

Datasheet

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S25FL256SAGNFI000 Specifications

Attribute	Attribute Value

Part Number	S25FL256SAGNFI000
Manufacturer	Cypress Semiconductor
ChipWorker Part#	CW3632963
Category	Flash Memory, Flash
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	WSON-8
Supply Voltage (DC)	2.70V (min)
Number of Positions	8 Position
Clock Speed	133 MHz
Memory Size	32000000 B
Access Time(Max)	8 ns
Operating Temperature (Max)	85 ℃
Operating Temperature (Min)	-40 ℃
Supply Voltage	2.7V ~ 3.6V
Supply Voltage (Max)	3.6 V
Supply Voltage (Min)	2.7 V
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Size-Length	8 mm
Size-Width	6 mm
Size-Height	0.75 mm
Operating Temperature	-40℃ ~ 85℃
Product Lifecycle Status	Unknown
Packaging	Tray
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

The S25FL256SAGNFI000 is a 256MB MirrorBit® Flash Non-Volatile Memory CMOS 3V core with versatile I/O serial peripheral interface with multi-I/O. This device connects to a host system via a serial peripheral interface (SPI). This multiple width interface is called SPI multi-I/O or MIO. In addition, the FL-S family adds support for double data rate (DDR) read commands for SIO, DIO and QIO that transfer address and read data on both edges of the clock. The eclipse architecture features a page programming buffer that allows up to 256 words to be programmed in one operation, resulting in faster effective programming and erase than prior generation SPI program or erase algorithms. By using FL-S device at the higher clock rates supported, with QIO or DDR-QIO commands, the instruction read transfer rate can match or exceed traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically.

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