S25FL512SAGBHI210 - Cypress Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

S25FL512SAGBHI210
Manufacturer

Cypress Semiconductor
ChipWorker Part#

CW54715961
Category

Flash Memory, Flash
Package

BGA-24
Description

NOR Flash Serial 3V/3.3V 512M-bit 512M/256M/128M x 1/2Bit/4Bit 8ns 24Pin BGA Tray
Documentation

Datasheet

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S25FL512SAGBHI210 Specifications

Attribute	Attribute Value

Part Number	S25FL512SAGBHI210
Manufacturer	Cypress Semiconductor
ChipWorker Part#	CW54715961
Category	Flash Memory, Flash
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	24 Pin
Case/Package	BGA-24
Supply Voltage (DC)	2.70V (min)
Number of Positions	24 Position
Clock Speed	133 MHz
Memory Size	64000000 B
Access Time(Max)	8 ns
Operating Temperature (Max)	85 ℃
Operating Temperature (Min)	-40 ℃
Supply Voltage	2.7V ~ 3.6V
Supply Voltage (Max)	3.6 V
Supply Voltage (Min)	2.7 V
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Operating Temperature	-40℃ ~ 85℃
Product Lifecycle Status	Unknown
Packaging	Tray
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

The S25FL512SAGBHI210 is a 512MB MirrorBit® Flash Non-Volatile Memory CMOS 3V core with versatile I/O serial peripheral interface with multi-I/O. Traditional SPI 1-bit serial input and output is supported as well as optional 2-bit and 4-bit serial commands. This multiple width interface is called SPI multi-I/O or MIO. In addition, the FL-S family adds support for double data rate (DDR) read commands for SIO, DIO and QIO that transfer address and read data on both edges of the clock. The eclipse architecture features a page programming buffer that allows up to 256 words (512 bytes) to be programmed in one operation, resulting in faster effective programming and erase than prior generation SPI program or erase algorithms. By using FL-S device at the higher clock rates supported, with QIO or DDR-QIO commands, the instruction read transfer rate can match or exceed traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically.

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