S29AL008J70BFI020 - Cypress Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

S29AL008J70BFI020
Manufacturer

Cypress Semiconductor
ChipWorker Part#

CW31430833
Category

Flash Memory, Flash
Package

FBGA-48
Description

NOR Flash Parallel 3V/3.3V 8Mbit 1M/512K x 8Bit/16Bit 70ns 48Pin FBGA Tray
Documentation

Datasheet

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S29AL008J70BFI020 Specifications

Attribute	Attribute Value

Part Number	S29AL008J70BFI020
Manufacturer	Cypress Semiconductor
ChipWorker Part#	CW31430833
Category	Flash Memory, Flash
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	48 Pin
Case/Package	FBGA-48
Supply Current	12 mA
Number of Positions	48 Position
Number of Bits	8, 16 Bit
Access Time	70 ns
Memory Size	1000000 B
Access Time(Max)	70 ns
Operating Temperature (Max)	85 ℃
Operating Temperature (Min)	-40 ℃
Supply Voltage	2.7V ~ 3.6V
Supply Voltage (Max)	3.6 V
Supply Voltage (Min)	2.7 V
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Size-Length	8.15 mm
Size-Width	6.15 mm
Size-Height	0.76 mm
Operating Temperature	-40℃ ~ 85℃
Product Lifecycle Status	Unknown
Packaging	Tray
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

The S29AL008J70BFI020 is a 8MB CMOS Flash Memory organized as 1048576 bytes or 524288 words. The word-wide data appears on DQ15-DQ0, the byte-wide data appears on DQ7-DQ0. This device is designed to be programmed in-system with the standard system 3VCC supply. The device can also be programmed in standard EPROM programmers. The device offers access times of up to 70ns allowing high speed microprocessors to operate without wait states. To eliminate bus contention the device has separate chip enable (CE#), write enable (WE#) and output enable (OE#) controls. The device requires only a single 3V power supply for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations. The S29AL008J is entirely command set compatible with the JEDEC single-power-supply flash standard. Commands are written to the command register using standard microprocessor write timings.
Bottom boot sector device
Manufactured on 110nm process technology - Fully compatible with 200nm S29AL008D
Secured silicon sector region
Flexible sector architecture
Hardware method of locking a sector to prevent any program or erase operations within that sector
Reduces overall programming time when issuing multiple program command sequences
Pinout and software compatible with single-power supply flash
Superior inadvertent write protection
High performance
Ultralow power consumption
Cycling endurance - 1000000 cycles per sector typical
Data retention - 20 years typical
Erase suspend/erase resume
Data# polling and toggle bits
Provides a hardware method of detecting program or erase cycle completion
Hardware method to reset the device to reading array data

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