S29GL01GP11FFIR10 - Cypress Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

S29GL01GP11FFIR10
Manufacturer

Cypress Semiconductor
ChipWorker Part#

CW55190017
Category

Flash Memory, Flash
Package

BGA-64
Description

NOR Flash Parallel 3V/3.3V 1Gbit 128M/64M x 8Bit/16Bit 110ns 64Pin Fortified BGA Tray
Documentation

Datasheet

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S29GL01GP11FFIR10 Specifications

Attribute	Attribute Value

Part Number	S29GL01GP11FFIR10
Manufacturer	Cypress Semiconductor
ChipWorker Part#	CW55190017
Category	Flash Memory, Flash
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	64 Pin
Case/Package	BGA-64
Supply Voltage (DC)	3.00V (min)
Supply Current	110 mA
Number of Positions	64 Position
Number of Bits	8, 16 Bit
Access Time	110 ns
Memory Size	128000000 B
Access Time(Max)	110 ns
Operating Temperature (Max)	85 ℃
Operating Temperature (Min)	-40 ℃
Supply Voltage	3V ~ 3.6V
Supply Voltage (Max)	3.6 V
Supply Voltage (Min)	3 V
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Operating Temperature	-40℃ ~ 85℃ (TA)
Product Lifecycle Status	Unknown
Packaging	Tray
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The S29GL01GP11FFIR10 is a 1Gbit 3V, page flash with 90nm MirrorBit process technology in 64 pin BGA package. This device offers a fast page access time of 25ns with a corresponding random access time as fast as 110ns at regulated VCC. It features a write buffer that allows a maximum of 32words/64bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. It makes device ideal for today"s embedded applications that require higher density, better performance and lower power consumption. It has an uniform 64Kword/128Kbyte sector architecture with one thousand twenty-four sectors, hardware reset input (RESET#) resets device and ready/busy# output (RY/BY#) detects program or erase cycle completion.
R1 = VIO = VCC = 3V to 3.6V, highest address sector protected
8-word/16-byte page read buffer
100000 erase cycles per sector typical and 20year data retention typical
Write operation status bits indicate program and erase operation completion
Unlock bypass program command to reduce programming time
Support for CFI (Common Flash Interface)
Persistent and password methods of advanced sector protection
Suspend and resume commands for program and erase operations
Industrial temperature range from -40°C to +85°C
WP#/ACC input, protects first or last sector regardless of sector protection settings

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