S29JL032J70TFI320 - Cypress Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

S29JL032J70TFI320
Manufacturer

Cypress Semiconductor
ChipWorker Part#

CW13620447
Category

Flash Memory, Flash
Package

TSOP-48
Description

NOR Flash Serial 3V/3.3V 32Mbit 4M/2M x 8Bit/16Bit 70ns 48Pin TSOP Tray
Documentation

Datasheet

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S29JL032J70TFI320 Specifications

Attribute	Attribute Value

Part Number	S29JL032J70TFI320
Manufacturer	Cypress Semiconductor
ChipWorker Part#	CW13620447
Category	Flash Memory, Flash
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	48 Pin
Case/Package	TSOP-48
Supply Current	16 mA
Number of Positions	48 Position
Number of Bits	8, 16 Bit
Access Time	70 ns
Memory Size	4000000 B
Access Time(Max)	70 ns
Operating Temperature (Max)	85 ℃
Operating Temperature (Min)	-40 ℃
Supply Voltage	2.7V ~ 3.6V
Supply Voltage (Max)	3.6 V
Supply Voltage (Min)	2.7 V
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Operating Temperature	-40℃ ~ 85℃ (TA)
Product Lifecycle Status	Unknown
Packaging	Tray
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

The S29JL032J70TFI320 is a 32MB simultaneous Read/Write Flash Memory organized as 2097152 words of 16-bit each or 4194304 bytes of 8-bit each. Word mode data appears on DQ15-DQ0, byte mode data appears on DQ7-DQ0. The device is designed to be programmed in-system with the standard 3V VCC supply and can also be programmed in standard EPROM programmers. The device is available with an access time of 70ns. Standard control pins - chip enable (CE#), write enable (WE#) and output enable (OE#) - control normal read and write operations and avoid bus contention issues. The device requires only a single 3V power supply for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations.
Bottom boot device, 2 banks - 8/24MB
Data can be continuously read from one bank while executing erase/program functions in another bank
Zero latency between read and write operations
Multiple bank architecture
Manufactured on 0.11µm process technology
Zero power operation
Compatible with JEDEC standards
Pinout and software compatible with single-power-supply flash standard
Cycling endurance - 1million cycles per sector typical
Data retention - 20 years typical
Supports common flash memory interface
Erase suspend/erase resume
Data# polling and toggle bits
Provides a software method of detecting the status of program or erase operations
Unlock bypass program command - Reduces overall programming time
Ready/busy# output - Hardware method for detecting program or erase cycle completion
Hardware reset pin - Hardware method of resetting the internal state machine to the read mode
WP#/ACC input pin - Acceleration function accelerates program timing
Write protect function protects the two outermost boot sectors regardless of sector protect status
Hardware method to prevent any program or erase operation within a sector

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