S29JL064J55TFI000 - Cypress Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

S29JL064J55TFI000
Manufacturer

Cypress Semiconductor
ChipWorker Part#

CW20665117
Category

Flash Memory, Flash
Package

TSOP-48
Description

NOR Flash Parallel 3V/3.3V 64Mbit 8M/4M x 8Bit/16Bit 55ns 48Pin TSOP Tray
Documentation

Datasheet

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S29JL064J55TFI000 Specifications

Attribute	Attribute Value

Part Number	S29JL064J55TFI000
Manufacturer	Cypress Semiconductor
ChipWorker Part#	CW20665117
Category	Flash Memory, Flash
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	48 Pin
Case/Package	TSOP-48
Supply Current	16 mA
Number of Positions	48 Position
Number of Bits	8, 16 Bit
Access Time	55 ns
Memory Size	8000000 B
Access Time(Max)	55 ns
Operating Temperature (Max)	85 ℃
Operating Temperature (Min)	-40 ℃
Supply Voltage	2.7V ~ 3.6V
Supply Voltage (Max)	3.6 V
Supply Voltage (Min)	2.7 V
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Operating Temperature	-40℃ ~ 85℃ (TA)
Product Lifecycle Status	Unknown
Packaging	Tray
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	3A991.b.1.a

Product Description

The S29JL064J55TFI000 is a 64MB CMOS simultaneous Read/Write Flash Memory organized as 4194304 words of 16-bit each or 8388608 bytes of 8-bit each. Word mode data appears on DQ15-DQ0, byte mode data appears on DQ7-DQ0. The device is designed to be programmed in-system with the standard 3VCC supply and can also be programmed in standard EPROM programmers. The device is available with an access time of 55ns. Standard control pins - chip enable (CE#), write enable (WE#) and output enable (OE#) - control normal read and write operations and avoid bus contention issues. The device requires only a single 3V power supply for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations.
Standard configuration
Data can be continuously read from one bank while executing erase/program functions in another bank
Zero latency between read and write operations
Flexible bank architecture
Read may occur in any of the three banks not being programmed or erased
Four banks may be grouped by customer to achieve desired bank divisions
Top and bottom boot sectors in the same device
Any combination of sectors can be erased
Manufactured on 0.11µm process technology
Secured silicon region - Extra 256-byte sector
Sophisticated power management circuits reduce power consumed during inactive periods to nearly zero
Compatible with JEDEC standards
Pinout and software compatible with single-power-supply flash standard
High performance
Program time - 7µs/word typical using accelerated programming function
Ultralow power consumption
Cycling endurance - 1million cycles per sector typical
Data retention - 20 years typical
Supports common flash memory interface
Erase suspend/erase resume

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