SBC846BDW1T1G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

SBC846BDW1T1G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW8801600
Category

BJT Transistor, BJT
Package

SOT-363-6
Description

SC-88 NPN 65V 0.1A
Documentation

Datasheet

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SBC846BDW1T1G Specifications

Attribute	Attribute Value

Part Number	SBC846BDW1T1G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW8801600
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	6 Pin
Case/Package	SOT-363-6
Frequency	100 MHz
Halogen Free Status	Halogen Free
Number of Positions	6 Position
Polarity	NPN
Power Dissipation	380 mW
Gain Bandwidth Product	100 MHz
Breakdown Voltage (Collector to Emitter)	65 V
Continuous Collector Current	0.1A
hFE Min	200
hFE Max	450
Input Power (Max)	380 mW
DC Current Gain (hFE)	200
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	380 mW
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

Thanks to ON Semiconductor, your circuit can handle high levels of voltage using the NPN SBC846BDW1T1G general purpose bipolar junction transistor. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 380 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It has a maximum collector emitter voltage of 65 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

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