SBC846BWT1G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

SBC846BWT1G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW6623173
Category

BJT Transistor, BJT
Package

SC-70-3
Description

SC-70 NPN 65V 0.1A
Documentation

Datasheet

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SBC846BWT1G Specifications

Attribute	Attribute Value

Part Number	SBC846BWT1G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW6623173
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SC-70-3
Frequency	100 MHz
Halogen Free Status	Halogen Free
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	200 mW
Breakdown Voltage (Collector to Emitter)	65 V
Continuous Collector Current	0.1A
hFE Min	200 @2mA, 5V
Input Power (Max)	150 mW
DC Current Gain (hFE)	200
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	150 mW
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Material	Silicon
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The versatility of this NPN SBC846BWT1G GP BJT from ON Semiconductor makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 150 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 65 V and a maximum emitter base voltage of 6 V.

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