SBC856BWT1G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

SBC856BWT1G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW32818296
Category

BJT Transistor, BJT
Package

SC-70-3
Description

SC-70 PNP 65V 0.1A
Documentation

Datasheet

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SBC856BWT1G Specifications

Attribute	Attribute Value

Part Number	SBC856BWT1G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW32818296
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SC-70-3
Frequency	100 MHz
Number of Positions	3 Position
Polarity	PNP
Power Dissipation	150 mW
Gain Bandwidth Product	100 MHz
Breakdown Voltage (Collector to Emitter)	65 V
Continuous Collector Current	0.1A
hFE Min	220
hFE Max	475
Input Power (Max)	150 mW
DC Current Gain (hFE)	220
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	55 ℃
Power Dissipation (Max)	150 mW
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Material	Silicon
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

Jump-start your electronic circuit design with this versatile PNP SBC856BWT1G GP BJT from ON Semiconductor. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 150 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 65 V and a maximum emitter base voltage of 5 V.

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