SCT2H12NZGC11 - ROHM Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

SCT2H12NZGC11
Manufacturer

ROHM Semiconductor
ChipWorker Part#

CW11182348
Category

MOSFET, MOSFET Transistor
Package

TO-3
Description

Silicon Carbide Power MOSFET, N Channel, 3.7A, 1.7kV, 1.15Ω, 18V, 2.8V
Documentation

Datasheet

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SCT2H12NZGC11 Specifications

Attribute	Attribute Value

Part Number	SCT2H12NZGC11
Manufacturer	ROHM Semiconductor
ChipWorker Part#	CW11182348
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-3
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	1.15 Ω
Polarity	N-Channel
Power Dissipation	35 W
Threshold Voltage	2.8 V
Drain to Source Voltage (Vds)	1.7 kV
Breakdown Voltage (Drain to Source)	1700 V
Rise Time	21 ns
Input Capacitance (Ciss)	184pF @800V(Vds)
Fall Time	74 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	55 ℃
Power Dissipation (Max)	35W (Tc)
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Operating Temperature	175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

N-Channel 1700V 3.7A (Tc) 35W (Tc) Through Hole TO-3PFM

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