SCT50N120 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

SCT50N120
Manufacturer

ST Microelectronics
ChipWorker Part#

CW18711837
Category

MOSFET, MOSFET Transistor
Package

TO-247-3
Description

Trans MOSFET N-CH 1.2kV 65A 3Pin(3+Tab) HIP-247 Tube
Documentation

Datasheet

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SCT50N120 Specifications

Attribute	Attribute Value

Part Number	SCT50N120
Manufacturer	ST Microelectronics
ChipWorker Part#	CW18711837
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.052 Ω
Power Dissipation	318 W
Threshold Voltage	3 V
Drain to Source Voltage (Vds)	1200 V
Input Capacitance (Ciss)	1900pF @400V(Vds)
Operating Temperature (Max)	200 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	318000 mW
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Operating Temperature	-55℃ ~ 200℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	Compliant with Exemption
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material allows designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.
**Key Features**
Very tight variation of on-resistance vs. temperature
Very high operating junction temperature capability (TJ = 200 °C)
Very fast and robust intrinsic body diode
Low capacitance

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