SCTW100N65G2AG - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

SCTW100N65G2AG
Manufacturer

ST Microelectronics
ChipWorker Part#

CW532215438
Package

HiP-247
Description

HIP-247 N-CH 650V 100A
Documentation

Datasheet

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SCTW100N65G2AG Specifications

Attribute	Attribute Value

Part Number	SCTW100N65G2AG
Manufacturer	ST Microelectronics
ChipWorker Part#	CW532215438
Documentation	Datasheet
Number of Pins	3 Pin
Case/Package	HiP-247
Polarity	N-CH
Drain to Source Voltage (Vds)	650 V
Continuous Drain Current (Ids)	100A
Input Capacitance (Ciss)	3315pF @520V(Vds)
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	420000 mW
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Product Lifecycle Status	Active
Packaging	Tube
RoHS	Compliant with Exemption
ECCN Code	EAR99

Product Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The main features of this product include remarkably low on-resistance per unit area and very good switching performance. The variation of both RDS(on) and switching losses are almost independent from junction temperature.
**Key Features**
Designed for automotive applications
Tight variation of on-resistance vs. temperature
Very fast and robust intrinsic body diode
Very high operating temperature capability (TJ = 200 °C)
Low capacitance

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