SGD02N120 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

SGD02N120
Manufacturer

Infineon
ChipWorker Part#

CW56918237
Category

IGBT Transistor, IGBT Module
Package

TO-252-3
Description

Trans IGBT Chip N-CH 1200V 6.2A 62000mW 3Pin(2+Tab) DPAK T/R
Documentation

Datasheet

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SGD02N120 Specifications

Attribute	Attribute Value

Part Number	SGD02N120
Manufacturer	Infineon
ChipWorker Part#	CW56918237
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Breakdown Voltage (Collector to Emitter)	1200 V
Input Power (Max)	62 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	62 W
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Size-Length	6.5 mm
Size-Width	6.22 mm
Size-Height	2.3 mm
Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Not Recommended for New Design
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

Summary of Features:
30% lower E off compared to previous generation
Short circuit withstand time – 10μs
Designed for operation above 30kHz
High ruggedness, temperature stable behaviour
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC for target applications
Target Applications:
Infineon offers a comprehensive IGBT portfolio for the general purpose inverters, solar inverters, UPS, induction heating, microwave oven, rice cookers, welding and SMPS segments.

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