SM6T30AY - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

SM6T30AY
Manufacturer

ST Microelectronics
ChipWorker Part#

CW16449783
Category

TVS Diode
Package

DO-214AA
Description

SMB 25.6V 600W
Documentation

Datasheet

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SM6T30AY Specifications

Attribute	Attribute Value

Part Number	SM6T30AY
Manufacturer	ST Microelectronics
ChipWorker Part#	CW16449783
Category	TVS Diode
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	2 Pin
Case/Package	DO-214AA
Power Rating	600 W
Breakdown Voltage	28.5 V
Number of Circuits	1 Circuit
Number of Positions	2 Position
Power Dissipation	600 W
Clamping Voltage	53.5 V
Max Repetitive Reverse Voltage (Vrrm)	25.6V
Test Current	1 mA
Max Breakdown Voltage	31.5 V
Peak Pulse Power	600 W
Min Breakdown Voltage	28.5 V
Reverse Breakdown Voltage	28.5 V
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Junction Temperature	-55℃ ~ 150℃
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Size-Length	4.6 mm
Size-Width	3.95 mm
Size-Height	2.45 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Cut Tape (CT)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
Mil-Spec	Yes
REACH SVHC Compliance Edition	2015/12/17

Product Description

The Transil SM6T series TVS Diode designed to protect sensitive equipment against electrostatic discharges according to IEC 61000-4-2 and MIL STD 883, method 3015 and electrical overstress according to IEC 61000-4-4 and 5. It is generally used against surges below 600W (10/1000µs). Planar technology makes these devices suitable for high-end equipment and SMPS where low leakage current and high junction temperature are required to provide reliability and stability over time.
6.8 to 220V Breakdown voltage range
Unidirectional and bidirectional types
515W (10/1000µs) High power capability at Tj max
-55 to 150°C Operating junction temperature range

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