SM6T33AY - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

SM6T33AY
Manufacturer

ST Microelectronics
ChipWorker Part#

CW10238572
Category

TVS Diode
Package

DO-214AA-2
Description

SMB 28.2V 600W
Documentation

Datasheet

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SM6T33AY Specifications

Attribute	Attribute Value

Part Number	SM6T33AY
Manufacturer	ST Microelectronics
ChipWorker Part#	CW10238572
Category	TVS Diode
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	2 Pin
Case/Package	DO-214AA-2
Operating Voltage	30 V
Breakdown Voltage	33 V
Number of Circuits	1 Circuit
Number of Positions	2 Position
Power Dissipation	600 W
Clamping Voltage	59 V
Max Repetitive Reverse Voltage (Vrrm)	28.2V
Test Current	1 mA
Max Breakdown Voltage	34.7 V
Peak Pulse Power	600 W
Min Breakdown Voltage	31.4 V
Reverse Breakdown Voltage	31.4 V
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Junction Temperature	-55℃ ~ 150℃
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Size-Length	4.6 mm
Size-Width	3.95 mm
Size-Height	2.45 mm
Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Cut Tape (CT)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
Mil-Spec	Yes
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The Transil SM6T series TVS Diode designed to protect sensitive equipment against electrostatic discharges according to IEC 61000-4-2 and MIL STD 883, method 3015 and electrical overstress according to IEC 61000-4-4 and 5. It is generally used against surges below 600W (10/1000µs). Planar technology makes these devices suitable for high-end equipment and SMPS where low leakage current and high junction temperature are required to provide reliability and stability over time.
6.8 to 220V Breakdown voltage range
Unidirectional and bidirectional types
515W (10/1000µs) High power capability at Tj max
-55 to 150°C Operating junction temperature range

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