SM74611KTTR - TI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

SM74611KTTR
Manufacturer

TI
ChipWorker Part#

CW5905763
Category

TVS Diode
Package

TO-263-3
Description

Diode 28V 15A 4Pin(3+Tab) TO-263 T/R
Documentation

Datasheet

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SM74611KTTR Specifications

Attribute	Attribute Value

Part Number	SM74611KTTR
Manufacturer	TI
ChipWorker Part#	CW5905763
Category	TVS Diode
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-263-3
Supply Voltage (DC)	28.0V (max)
Number of Outputs	1 Output
Input Voltage (DC)	30.0 V
Number of Positions	3 Position
Forward Voltage	26mV @8A
Power Dissipation	695 mW
Quiescent Current	0.00 A
Forward Current	15000 mA
Maximum Forward Voltage (Max)	26mV @8A
Forward Current (Max)	15 A
Operating Temperature (Max)	125 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	695 mW
Supply Voltage (Max)	30 V
Input Voltage	30 V
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Operating Temperature	-65℃ ~ 125℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Contains Lead
REACH SVHC Compliance Edition	2015/06/15

Product Description

The SM74611KTTR is a smart Bypass Diode used in photovoltaic applications. It serves the purpose of providing an alternate path for string current when parts of the panel are shaded during normal operation. Without bypass diodes, the shaded cells will exhibit a hot spot which is caused by excessive power dissipation in the reverse biased cells. Currently, conventional P-N junction diodes or Schottky diodes are used to mitigate this issue. Unfortunately the forward voltage drop for these diodes is still considered high (0.6V for normal diodes and 0.4V for Schottky). With 10A of currents flowing through these diodes, the power dissipation can reach as high as 6W. This in turn will raise the temperature inside the junction box where these diodes normally reside and reduce module reliability. The advantage of the SM74611 is that it has a lower forward voltage drop than PN junction and schottky diodes. It has a typical average forward voltage drop of 26mV at 8A of current.
Less power dissipation than schottky diode
Lower leakage current than schottky diode
Footprint and pin compatible with conventional
Operating forward current (IF) of up to 15A
Low average forward voltage (26mV at 8A)
Device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

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