SMBT3904E6327HTSA1 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

SMBT3904E6327HTSA1
Manufacturer

Infineon
ChipWorker Part#

CW15669100
Category

BJT Transistor, BJT
Package

SOT-23-3
Description

SOT-23 NPN 40V 0.2A
Documentation

Datasheet

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SMBT3904E6327HTSA1 Specifications

Attribute	Attribute Value

Part Number	SMBT3904E6327HTSA1
Manufacturer	Infineon
ChipWorker Part#	CW15669100
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-23-3
Frequency	300 MHz
Voltage Rating (DC)	40.0 V
Current Rating	200 mA
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	330 mW
Breakdown Voltage (Collector to Emitter)	40 V
Continuous Collector Current	0.2A
hFE Min	100 @10mA, 1V
Input Power (Max)	330 mW
DC Current Gain (hFE)	100
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	330 mW
	expand all
Size-Length	2.9 mm
Size-Width	1.3 mm
Size-Height	1 mm
Material	Silicon
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

The SMBT 3904 E6327 is a NPN silicon switching Bipolar Transistor with low collector-emitter saturation voltage.
0.1 to 100mA High DC current gain
SMBT3906/MMBT3906 Complementary types

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