SMLVT3V3 - ST Microelectronics
The pictures are for reference only, and the specific specifications can be found in the product manual.
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Part NoSMLVT3V3
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ManufacturerST Microelectronics
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ChipWorker Part#CW911993
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CategoryTVS Diode
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PackageDO-214AA
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DescriptionSMB 3.3V 600W
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DocumentationDatasheet
Payment Methods and Delivery
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SMLVT3V3 Specifications
| Attribute | Attribute Value |
|---|---|
| Part Number | SMLVT3V3 |
| Manufacturer | ST Microelectronics |
| ChipWorker Part# | CW911993 |
| Category | TVS Diode |
| Documentation | Datasheet |
| Mounting Style | Surface Mount |
| Number of Pins | 2 Pin |
| Case/Package | DO-214AA |
| Voltage Rating (DC) | 3.30 V |
| Operating Voltage | 3.3 V |
| Capacitance | 5200 pF |
| Power Rating | 600 W |
| Breakdown Voltage | 3.3 V |
| Number of Circuits | 1 Circuit |
| Number of Positions | 2 Position |
| Power Dissipation | 600 W |
| Clamping Voltage | 10.3 V |
| Max Repetitive Reverse Voltage (Vrrm) | 3.3V |
| Test Current | 1 mA |
| Max Breakdown Voltage | 4.1 V |
| Peak Pulse Power | 600 W |
| Min Breakdown Voltage | 4.1 V |
| Reverse Breakdown Voltage | 4.1 V |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Junction Temperature | -25℃ ~ 175℃ |
| expand all | |
| Size-Length | 4.6 mm |
| Size-Width | 3.95 mm |
| Size-Height | 2.45 mm |
| Operating Temperature | -25℃ ~ 175℃ (TJ) |
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| RoHS | RoHS Compliant |
| Lead-Free Status | Lead Free |
| REACH SVHC Compliance | No SVHC |
| REACH SVHC Compliance Edition | 2015/12/17 |
| ECCN Code | EAR99 |
Product Description
- The SMLVT3V3 from STMicroelectronics is an unidirectional Transil low voltage diode in 2pin DO-214AA package. This device is designed specifically to protect sensitive 3.3V equipment against transient overvoltages. Transil diode provides high overvoltage protection by clamping action. The instantaneous response to transient overvoltages makes the SMLVT3V3 particularly suitable to protect voltage sensitive devices such as MOS technology and low voltage supplied ICs.
- Peak pulse power of 600W (10/1000µs)
- 3.3V standoff voltage
- Low clamping factor
- Fast response time
- JEDEC registered package outline
- Non repetitive surge peak forward current (IFSM) of 100A at tp=10ms
- Junction temperature range from -25°C to 175°C
- Leakage current (Irm) of 200µA at Vrm=3.3V
- Breakdown voltage (Vbr) of 4.1V at IR=1mA
- Clamping voltage (VCL) of 7.3V (10/1000µs)
Delivery
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Ordering Information
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