SMMBT2907ALT3G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

SMMBT2907ALT3G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW19394733
Category

BJT Transistor, BJT
Package

SOT-23-3
Description

SOT-23 PNP 60V 0.6A
Documentation

Datasheet

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SMMBT2907ALT3G Specifications

Attribute	Attribute Value

Part Number	SMMBT2907ALT3G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW19394733
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-23-3
Frequency	200 MHz
Number of Positions	3 Position
Polarity	PNP
Power Dissipation	0.35 W
Breakdown Voltage (Collector to Emitter)	60 V
Continuous Collector Current	0.6A
hFE Min	50
hFE Max	300
Input Power (Max)	300 mW
DC Current Gain (hFE)	50
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	225 mW
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Size-Length	3.04 mm
Size-Width	2.64 mm
Size-Height	1.11 mm
Material	Silicon
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

This PNP SMMBT2907ALT3G general purpose bipolar junction transistor from ON Semiconductor is perfect for a circuit requiring high-current density and can operate in a high voltage range. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 300 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

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