SMMBT3906LT3G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

SMMBT3906LT3G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW32739577
Category

BJT Transistor, BJT
Package

SOT-23-3
Description

SOT-23 PNP 40V 0.2A
Documentation

Datasheet

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SMMBT3906LT3G Specifications

Attribute	Attribute Value

Part Number	SMMBT3906LT3G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW32739577
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-23-3
Frequency	250 MHz
Polarity	PNP
Power Dissipation	0.3 W
Breakdown Voltage (Collector to Emitter)	40 V
Continuous Collector Current	0.2A
hFE Min	100 @10mA, 1V
Input Power (Max)	300 mW
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	300 mW
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Material	Silicon
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

This PNP SMMBT3906LT3G general purpose bipolar junction transistor from ON Semiconductor is perfect for a circuit requiring high-current density and can operate in a high voltage range. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 300 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 5 V.

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