SMMBT5551LT1G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

SMMBT5551LT1G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW1419633
Category

BJT Transistor, BJT
Package

SOT-23-3
Description

SOT-23 NPN 160V 0.6A
Documentation

Datasheet

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SMMBT5551LT1G Specifications

Attribute	Attribute Value

Part Number	SMMBT5551LT1G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW1419633
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-23-3
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	225 mW
Breakdown Voltage (Collector to Emitter)	160 V
Continuous Collector Current	0.6A
hFE Min	80 @10mA, 5V
hFE Max	250
Input Power (Max)	225 mW
DC Current Gain (hFE)	30
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	300 mW
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Material	Silicon
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

Thanks to ON Semiconductor, your circuit can handle high levels of voltage using the NPN SMMBT5551LT1G general purpose bipolar junction transistor. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 300 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. It has a maximum collector emitter voltage of 160 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.

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